h11aa1 document number 83608 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 i179010 1 2 3 6 5 4 b c e a/c c/a nc pb p b -free e3 optocoupler, phototransistor output, ac input, with base connection features ? ac or polarity insensitive input built-in reverse polarity input protection i/o compatible with integrated circuits industry standard dip package isolation test voltage 5300 v rms lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e52744 system code h or j, double protection csa 93751 bsi iec60950 iec60065 din en 60747-5-2 (vde0884) din en 60747-5-5 pending available with option 1 fimko applications telephone line detection ac line motor plc instrumentation description the h11aa1 is a bi-directional input optically coupled isolator consisting of tw o inverse parallel gallium ars- enide infrared leds coupled to a silicon npn pho- totransistor in a 6-pin dip package. the h11aa1 has a minimum ctr of 20 %, a ctr symmetry of 1:3 and is designed for applications requiring detection or monitoring of ac signals. order information for additional information on t he available options refer to option information. absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can cause pe rmanent damage to the device. func tional operation of the device is not implied at these or any other condition s in excess of those given in the operatio nal sections of this document. exposure to absolute maximum rating for extended periods of t he time can adversely affect reliability. input part remarks h11aa1 ctr > 20 %, dip-6 H11AA1-X006 ctr > 20 %, dip-6 400 mil (option 6) h11aa1-x007 ctr > 20 %, smd-6 (option 7) h11aa1-x009 ctr > 20 %, smd-6 (option 9) parameter test condition symbol value unit forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.3 mw/c
www.vishay.com 2 document number 83608 rev. 1.5, 26-oct-04 h11aa1 vishay semiconductors output coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing require ments. typical values are c haracteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler parameter test condition symbol value unit power dissipation p diss 200 mw derate linearly from 25 c 2.6 mw/c collector-emitter breakdown voltage bv ceo 30 v emitter-base breakdown voltage bv ebo 5.0 v collector-base breakdown voltage bv cbo 70 v parameter test condition symbol value unit isolation test voltage (between emitter and detector) referred to standard climate 23 c/50%rh, din 50014 v iso 5300 v rms creeapage 7.0 mm clearance 7.0 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? storage temperature t stg - 55 to + 150 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c t sld 10 sec. parameter test condition symbol min ty p. max unit forward voltage i f = 10 ma v f 1.2 1.5 v parameter test condition symbol min ty p. max unit collector-emitter breakdown voltage i c = 1.0 ma bv ceo 30 v emitter-base breakdown voltage i e = 100 abv ebo 5.0 v collector-base breakdown voltage i c = 100 abv cbo 70 v collector-emitter leakage current v ce = 10 v i ceo 5.0 100 na parameter test condition symbol min ty p. max unit collector-emitter saturation voltage i f = 10 ma, i c = 0.5 ma v cesat 0.4 v
h11aa1 document number 83608 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 current transfer ratio typical characteris tics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit dc current transfer ratio i f = 10 ma, v ce = 10 v ctr dc 20 % symmetry (ctr at + 10 ma) /( ctr at - 10 ma) 0.33 1.0 3.0 figure 1. led forward current vs.forward voltage figure 2. normalized non-saturated and saturated ctr vs. led current ih11aa1_01 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 -60 -40 -20 0 20 40 60 25c 85c C55c vf - led forward voltage - v if - led forward current - ma ih11aa1_02 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sa t) nctr normalized to: v ce =10 v,i f =10ma t a = 25c ctrce(sat) v ce = 0.4 v figure .normalizednon-saturatedandsaturatedctrs.led current figure 4.normalizednon-saturatedandsaturatedctrs.led current ih11aa1_03 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sa t) nctr nor maliz ed to: v ce =10 v,i f =10ma, ctrce(sat) v ce = 0.4 v t a = 50c ih11aa1_04 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sa t) nctr nor maliz ed to: v ce =10 v,i f =10ma, ctrce(sat) v ce = 0.4 v t a = 70c
www.vishay.com 4 document number 83608 rev. 1.5, 26-oct-04 h11aa1 vishay semiconductors figure 5. normalized non-saturated and saturated ctr vs. led current figure 6. collector-emitter current vs. temperature and led current figure 7. collector-emitter leakage current vs.temp. ih11aa1_05 .1 1 10 100 1.5 1.0 0.5 0.0 i f - led current - ma nctr - normalized ctr nctr(sat) nctr normalized to: v ce =10 v,i f =10ma, ctrce(sat) v ce = 0.4 v t a = 85c ih11aa1_06 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50c 70c 100c if - led current - ma ice - collector current - ma 25c ih11aa1_07 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 ta - ambient temperature - c iceo - collector-emitter - na typical vce = 10v fiure 8ormaliectcbledcurrentantemp fiure collector-aephotocurrentledcurrent fiure 10ormaliephotocurrentledcurrent ih11aa1_08 .1 1 10 100 0.0 0.5 1.0 1.5 25c 50c 70c if - led current - ma nctrcb - normalized ctrcb normalized to: if =10 ma vcb = 9.3 v ih11aa1_09 100 10 1 .1 .01 .1 1 10 100 1000 if - led current - ma icb - collector base photocurrent - a icb = 1.0357 *if ^1.3631 ih11aa1_10 100 10 1 .1 .01 .1 1 10 nib-ta=-20c nib,ta=25c nib,ta=50c nib,ta=70c if - led current - ma normalized photocurrent normalized to: if = 10ma
h11aa1 document number 83608 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 11. normalized saturated hfe vs. base current and temperature figure 12. normalized saturated hfe vs. base current and temperature figure 13. propagation delay vs. collector load resistor ih11aa1_11 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 25c 50c 70c ib - base current - a nhfe(sat) - normalized saturated hfe normalized to: vce = 0.4 v ib = 20 a vce=10v ih11aa1_12 1 10 100 1000 0.0 0.5 1.0 1.5 ib - base current - ( a) nhfe(sat) - normalized saturated hfe -20c -25c 50c 70c normalized to: vce = 10v ib=20 a vce = 0.4v ih11aa1_13 100 10 1 .1 1 10 100 1000 1.0 1.5 2.0 2.5 rl - collector load resistor - k ? tplh tphl if=10ma vcc=5v,vth=1.5v tp C propagation delay - s tphl C propagation delay - s figure 14.sitchingaeform figure 15.sitchingschematic ih11aa1_14 i f t r =1.5 v v o t d t s t f t phl t plh v th ih11aa1_15 v cc =5v f=10 khz, df=50% r l v o i f =1 0 ma
www.vishay.com 6 document number 83608 rev. 1.5, 26-oct-04 h11aa1 vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a min. .315 (8.00) .020 (.51) .040 (1.02) .300 (7.62) ref. .375 (9.53) .395 (10.03) .012 (.30) typ. .0040 (.102) .0098 (.249) 15 max. option 9 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .307 (7.8) .291 (7.4) .407 (10.36) .391 (9.96) option 6 .315 (8.0) min. .300 (7.62) typ . .180 (4.6) .160 (4.1) .331 (8.4) min. .406 (10.3) max. .028 (0.7) min. option 7 18450
h11aa1 document number 83608 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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